Application

13802538 · SEMICONDUCTOR DEVICE ELEMENT FORMED ON SOI SUBSTRATE COMPRISING A HOLLOW REGION, AND HAVING CAPACITORS IN AN ELECTRIC FIELD ALLEVIATION REGION

Filed 2013-03-13 · Granted · Patent 8710617 (2014-04-29) The official file ↗The patent and its PDF ↗ · Art unit 2814 · Examiner Cesar Oswaldo Lopez Typical · CPC H10D 1/68 · MITSUBISHI ELECTRIC CORPORATION · Studebaker Brackett PLLC

Office actions

first was Notice of allowance

RCEs

no appeal

To first action

9.3 mo

to disposition 13.5 mo

Statutes raised

0 actions read

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