Application

14934111 · Method for Manufacturing a Transistor Device Comprising a Germanium Channel Material on a Silicon Based Substrate, and Associated Transistor Device

Filed 2015-11-05 · Granted · Patent 9640411 (2017-05-02) The official file ↗The patent and its PDF ↗ · Art unit 2817 · Examiner Anthony Ho Easy · CPC H10D 30/024 · IMEC VZW · MCDONNELL BOEHNEN HULBERT & BERGHOFF LLP

Office actions

first was Restriction requirement

RCEs

no appeal

To first action

6.9 mo

to disposition 17.9 mo

Statutes raised

103 112

1 actions read

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