Application

15228317 · METHODS OF FORMING A THROUGH-SUBSTRATE-VIA (TSV) AND A METALLIZATION LAYER AFTER FORMATION OF A SEMICONDUCTOR DEVICE

Filed 2016-08-04 · Granted · Patent 9917009 (2018-03-13) The official file ↗The patent and its PDF ↗ · Art unit 2898 · Examiner Chuong A Luu Typical · CPC H10W 20/023 · GLOBALFOUNDRIES Inc. · GLOBALFOUNDRIES INC.

Office actions

first was Non-final rejection

RCEs

no appeal

To first action

7.0 mo

to disposition 19.3 mo

Statutes raised

102

2 actions read

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