Application
15272736 · REMOVAL OF BASAL PLANE DISLOCATIONS FROM SILICON CARBIDE SUBSTRATE SURFACE BY HIGH TEMPERATURE ANNEALING AND PRESERVING SURFACE MORPHOLOGY
Filed 2016-09-22 · Granted · Patent 10020366 (2018-07-10) The official file ↗The patent and its PDF ↗ · Art unit 2813 · Examiner Vicki B Booker Typical · CPC H10D 62/8325 · The Government of the United States of America, as represented by the Secretary of the Navy · NAVAL RESEARCH LABORATORY
Office actions
1
first was Non-final rejection
RCEs
0
no appeal
To first action
11.9 mo
to disposition 21.6 mo
Statutes raised
112
1 actions read