PATLY.AIApplication
15771557 · METHOD OF ELIMINATING FAULTS IN A SEMICONDUCTOR FILM COMPRISING THE FORMATION OF A HYDROGEN TRAPPING LAYER
Filed 2018-04-27 · Abandoned The official file ↗ · Art unit 2817 · Examiner David J Goodwin Hard · CPC H10P 90/1916 · COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · OBLON, MCCLELLAND, MAIER & NEUSTADT, L.L.P.
Office actions
1
first was Non-final rejection
RCEs
0
no appeal
To first action
8.8 mo
to disposition 17.2 mo
Statutes raised
102 103
1 actions read