Application

15893414 · Semiconductor Devices Comprising Nitrogen-Doped Gate Dielectric, and Methods of Forming Semiconductor Devices

Filed 2018-02-09 · Granted · Patent 10115642 (2018-10-30) The official file ↗The patent and its PDF ↗ · Art unit 2896 · Examiner Warren H Kilpatrick Typical · CPC H10D 64/693 · Micron Technology, Inc. · Wells St. John, P.S.

Office actions

first was Non-final rejection

RCEs

no appeal

To first action

1.7 mo

to disposition 8.6 mo

Statutes raised

103

1 actions read

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