Application

16002129 · Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transistor And Arrays Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transistor

Filed 2018-06-07 · Granted · Patent 10263007 (2019-04-16) The official file ↗The patent and its PDF ↗ · Art unit 2812 · Examiner Abdulfattah B Mustapha Hard · CPC H10B 43/35 · Micron Technology, Inc. · Wells St. John, P.S.

Office actions

first was Non-final rejection

RCEs

no appeal

To first action

1.0 mo

to disposition 10.3 mo

Statutes raised

101 102

1 actions read

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