Application

16040033 · FABRICATION OF FIN FIELD EFFECT TRANSISTORS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES INCLUDING SEPARATE N-TYPE AND P-TYPE SOURCE/DRAINS USING A SINGLE SPACER DEPOSITION

Filed 2018-07-19 · Granted · Patent 10886271 (2021-01-05) The official file ↗The patent and its PDF ↗ · Art unit 2814 · Examiner Nelson Y Garces Typical · CPC H10D 84/856 · INTERNATIONAL BUSINESS MACHINES CORPORATION · INTERNATIONAL BUSINESS MACHINES CORPORATION