Application

17121523 · Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With Perpendicular Magnetic Anisotropy For STT-MRAM

Filed 2020-12-14 · Granted · Patent 11930717 (2024-03-12) The official file ↗The patent and its PDF ↗ · Art unit 2829 · Examiner Michelle Mandala Easy · CPC H10N 50/80 · Taiwan Semiconductor Manufacturing Company, Ltd. · Haynes and Boone, LLP (24061)

Office actions

first was Restriction requirement

RCEs

no appeal

To first action

31.3 mo

to disposition 38.9 mo

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