Application

17130214 · FORMING SHALLOW TRENCH ISOLATION REGIONS FOR NANOSHEET FIELD-EFFECT TRANSISTOR DEVICES USING SACRIFICIAL EPITAXIAL LAYER

Filed 2020-12-22 · Granted · Patent 11322408 (2022-05-03) The official file ↗The patent and its PDF ↗ · Art unit 2818 · Examiner Thao P Le Easy · CPC H10D 84/0151 · International Business Machines Corporation · INTERNATIONAL BUSINESS MACHINES CORPORATION

Office actions

first was Notice of allowance

RCEs

no appeal

To first action

14.5 mo

to disposition 16.3 mo

Statutes raised

0 actions read

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