Application

18066354 · Inner Spacer Formation in Multi-Gate Transistors

Filed 2022-12-15 · Granted · Patent 12336252 (2025-06-17) The official file ↗The patent and its PDF ↗ · Art unit 2898 · Examiner Tuan A Hoang Hard · CPC H10D 62/121 · Taiwan Semiconductor Manufacturing Co., Ltd. · Haynes and Boone, LLP (24061)

Office actions

first was Non-final rejection

RCEs

no appeal

To first action

21.2 mo

to disposition 30.1 mo

Statutes raised

102 103

1 actions read

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