Application

18609525 · FILM FORMING METHOD FOR FORMING SILICON FILM ON SUBSTRATE BY SIMULATANEOUSLY SUPPLYING SILANE-BASED GAS AND TERMINATION GAS

Filed 2024-03-19 · Pending The official file ↗ · Art unit 1714 · Examiner Kenneth A Bratland Jr Typical · CPC H10P 14/6328 · Tokyo Electron Limited · IPUSA, P.L.L.C

Office actions

first was Restriction requirement

RCEs

no appeal

To first action

23.2 mo

to disposition n/a

Statutes raised

103 112

3 actions read

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