Application

18718313 · PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING A POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND AN ACTIVE LAYER OF SINGLE-CRYSTAL SILICON CARBIDE

Filed 2024-06-10 · Pending The official file ↗ · Art unit 2811 · Examiner Samuel A Gebremariam Easy · CPC H10D 62/8325 · Soitec · TRASKBRITT, P.C.

Office actions

first was Non-final rejection

RCEs

no appeal

To first action

26.7 mo

to disposition n/a

Statutes raised

103 112

1 actions read

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