Application
19384341 · VERTICAL GALLIUM NITRIDE CONTAINING FIELD EFFECT TRANSISTOR WITH SILICON NITRIDE PASSIVATION AND GATE DIELECTRIC REGIONS
Filed 2025-11-10 · Pending The official file ↗ · Art unit OPAP · Examiner Docket Central Easy · CPC H10P 14/20 · POWER INTEGRATIONS, INC. · Power Integrations, Inc
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