Application

19520801 · METHOD FOR THE CREATION OF DEEP-LYING P-N TRANSITIONS IN A BCD PROCESS, BCD SUBSTRATE, AND SINGLE-PHOTON AVALANCHE DIODE BASED THEREON

Filed 2026-03-18 · Pending The official file ↗ · Art unit · ELMOS SEMICONDUCTOR SE · Womble Bond Dickinson US LLP

Office actions

first was

RCEs

no appeal

To first action

n/a

to disposition n/a

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