Application

19556051 · COMPOSITION AND PROCESS FOR ELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN

Filed 2026-03-04 · Pending The official file ↗ · Art unit OPAP · Examiner Docket Central Easy · CPC H10P 70/234 · BASF SE · BASF/Armstrong Teasdale

Office actions

first was

RCEs

no appeal

To first action

n/a

to disposition n/a

Statutes raised

0 actions read

Unlock the prosecution timelineIncluded in Pro, from $29 a month. Cancel any time.