Application
19560564 · HIGH THERMAL STABILITY BY DOPING OF OXIDE CAPPING LAYER FOR SPIN TORQUE TRANSFER (STT) MAGNETIC RANDOM ACCESS MEMORY (MRAM) APPLICATIONS
Filed 2026-03-09 · Pending The official file ↗ · Art unit OPAP · Examiner Docket Central Easy · CPC H10N 50/10 · Taiwan Semiconductor Manufacturing Company, Ltd. · Haynes and Boone, LLP (24061)
Office actions
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RCEs
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To first action
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