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Topic

Iii nitride semiconductor Steady

343 applications whose title mentions it. Its share of new filings over the last two years is 10% above the four years before.

Allowance rate
78%
+2 pts vs the USPTO 332 decided
Months to first action
15.5 mo
−3.1 vs the USPTO
Applications
343.0
in the record
Allowed
258.0
74 abandoned

Filings by year

How often the topic was filed

The most recent years are still filling in.

Applications

Recent applications on this topic

ApplicationTitleFiledStatusRejectionsRCEsTo 1st action
19603718METHOD FOR MANUFACTURING ENGINEERED GROWTH SUBSTRATE FOR HIGH-QUALITY GROUP III NIT…2026-07-06Pending00n/a
19600454GROUP III NITRIDE-BASED EPITAXIAL WAFER FOR HEMT POWER SEMICONDUCTOR AND METHOD FOR…2026-06-23Pending00n/a
19509904CRACK-FREE ULTRAWIDE-BANDGAP GROUP-III-NITRIDE SEMICONDUCTOR FILMS DEPOSITED ON SIL…2026-02-09Pending00n/a
15602817Method and apparatus for adaptive signal processing2012-01-10Allowed1012.0 mo
15760716Composition and method for controlled release2015-02-11Abandoned4123.0 mo
15313058Distributed ledger transaction verification2018-03-12Allowed3020.0 mo
15347810Thermal management of battery assemblies2021-04-13Pending2117.0 mo
15825020Machine learning model for anomaly detection2012-05-14Allowed1014.0 mo
15302941Wireless power transfer coil arrangement2015-06-15Abandoned4125.0 mo
15725991Catalyst for selective hydrogenation2018-07-16Allowed3022.0 mo
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