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Topic

Silicon carbide substrate Steady

201 applications whose title mentions it. Its share of new filings over the last two years is 15% above the four years before.

Allowance rate
55%
−20 pts vs the USPTO 180 decided
Months to first action
18.3 mo
−0.3 vs the USPTO
Applications
201.0
in the record
Allowed
99.0
81 abandoned

Filings by year

How often the topic was filed

The most recent years are still filling in.

Applications

Recent applications on this topic

ApplicationTitleFiledStatusRejectionsRCEsTo 1st action
19624663METHOD FOR TREATING A SUBSTRATE HAVING A POLYCRYSTALLINE SILICON CARBIDE REAR FACE2026-09-16Pending00n/a
19579452Silicon Carbide Epitaxial Substrate and Method of Manufacturing Silicon Carbide Sem…2026-04-17Pending00n/a
19522487METHOD FOR TREATING A SILICON CARBIDE SUBSTRATE2026-03-24Pending00n/a
15242369Method and apparatus for adaptive signal processing2012-01-10Allowed1012.0 mo
15967069Composition and method for controlled release2015-02-11Abandoned4123.0 mo
15517127Distributed ledger transaction verification2018-03-12Allowed3020.0 mo
15316812Thermal management of battery assemblies2021-04-13Pending2117.0 mo
15989463Machine learning model for anomaly detection2012-05-14Allowed1014.0 mo
15298974Wireless power transfer coil arrangement2015-06-15Abandoned4125.0 mo
15266287Catalyst for selective hydrogenation2018-07-16Allowed3022.0 mo
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